Silicon-Based Nanostructures: Experiment & Modeling
Abstract
Under this program, research was carried out in the area of Si-based nanoelectronic devices. The primary device of interest was a single-electron tunneling transistor fabricated in the Si MOS system. As part of the program, extended work on chemically-enhanced vapor etching as a tool for lithography and material processing, and upon the processing of CoSi2 as a viable interconnect, were pursued. Theoretical work addressed both the transport in the Si devices as well as the more general problems in small quantum, confined systems. It was natural to apply these results to GaAs based systems as well. Other portions of the effort entailed high-resolution TEM as a routine tool during our materials and device studies and the development of special visualization tools for the theoretical program. Sub-contracts were to SRA, Inc., for quantum transport studies of quantum devices, and for process modeling, and to Los Alamos National Laboratory for similar studies and for visualization of processing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 25, 1999
- Accession Number
- ADA365334
Entities
People
- David K. Ferry
Organizations
- Arizona State University