II-VI/III-V Heterojunction Lasers
Abstract
The research objectives of this program have focused on the development of blue/green light emitters. The effort was initially based on the II-VI compound semiconductors, but was later directed at the group III nitrides. As a result of the changes in objective, the summary of research activity addressed by this report involved the growth of both widegap II-VI and group III nitride materials as well as device studies in both. In the second part of the program we studied the growth and the optical evaluation of wide bandgap nitride heterostructures, an effort which included the first reporting of a GaN-based laser to be fabricated (in collaboration between Brown and the Cree Corporation) in the U.S., and the first to be grown on SiC substrates.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 14, 1999
- Accession Number
- ADA365588
Entities
People
- A. V. Nurmikko
- Robert L. Gunshor
Organizations
- Purdue University