Titanium Hydride Formation in Ti/Pt Films: the Impact on Ti/Pt/Au-gated III-V FETs.

Abstract

Ti/Pt metal layers are an integral part of the gate stack of many III-V field-effect transistors (FETs). These devices are known to be affected by H(sub 2) exposure. In this study, Auger Electron Spectroscopy (AES) measurements of Ti/Pt bilayers are correlated with electrical measurements of InAlAs/InGaAs/InP FETs fabricated with Ti/Pt/Au gates. The PET measurements show that H(sub 2) exposure shifts the device threshold voltage through the piezoelectric effect. AES reveals the formation of titanium hydride (TiH(sub x)) in Ti/Pt bilayers after identical H(sub 2) exposures. These results indicate that the volume expansion associated with TiH(sub x) formation causes compressive stress in Ti/Pt/Au gates, leading to the piezoelectric effect. After a I subsequent recovery anneal in N(sub 2), the FET measurements show that V(sub T) recovers. AES measurements confirm that the TiH(sub x) in hydrogenated Ti/Pt bilayers also decreases after further annealing in N(sub 2).

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Document Details

Document Type
Technical Report
Publication Date
Jun 22, 1999
Accession Number
ADA366046

Entities

People

  • J. A. Del Alamo
  • R. R. Blanchard

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Electrical Measurement
  • Electron Spectroscopy
  • Electronics
  • Electrons
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Piezoelectric Effect
  • Recovery
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Stresses
  • Titanium
  • Transistors

Fields of Study

  • Materials science

Readers

  • Computer Programming and Software Development.
  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene