Ultra-Sensitive Laser-Ionization for Real-Time Analysis-Control (ULTRA) of Silicon-MBE
Abstract
The objective of the ultra-sensitive Laser-Ionization for Real-Time Analysis Control (ULTRA) program was to develop and advanced growth diagnostics instrument for molecular beam epitaxy (MBE) systems which will provide date during material deposition of growth species fluxes and epitaxial growth rate in the most non-intrusive manner possible. This program was a cooperative "team" effort between SVT Associates and researchers at the University of Colorado, Boulder and the University of California, Los Angeles. In this report we will discuss the progress made in specific tasks outlined for this three year program. The highlights of this program are the following Optimized Ultra Tool by implementation of high quality laser and optics: factor of five increase in 9th harmonic (118nm) generation; low cost atomic resonance lamps examined as alternative VUV source; optimization of Time-of-Flight (TOF) hardware; quantification of the detection efficiency of flux species. Implemented Sensor Suite for MBE Process: implementation of prototype ULTRA on deposition systems; development of optical scattering and advanced pyrometry tools; interface-capability to process automation software control. Developed Fabrication Process of Nano-structures: surface dynamics study of GaAs homoepitaxy; InAs quantum dot growth on GaAs; SiGe nano-structure fabrication as function of flux and temperature; investigation of the effect of surfactants.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1999
- Accession Number
- ADA367918
Entities
People
- Jody Klaassen
- Kang L. Wang
- Peter Chow
- Steve Leone