DURIP 98-99: Molecular Beam Epitaxial Growth and In Situ Characterization of Phase Separated Optoelectronic Semiconductors

Abstract

This proposal requested funding to procure a Molecular Beam Epitaxy (MBE) chamber with extensive in situ diagnostic capabilities to study phase separation of III-V semiconductor alloys during epitaxial growth. An EPI930 Molecular Beam Epitaxy system was purchased from EPIMBE Products Group and installed in September of 1998, and is fully operational. This piece of equipment has facilitated several new research programs in the area of morphological and compositional evolution in III-V semiconductor thin films.

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Document Details

Document Type
Technical Report
Publication Date
Feb 28, 1999
Accession Number
ADA368132

Entities

People

  • Mirecki Millunchick

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Compounds
  • Chemistry
  • Compound Semiconductors
  • Epitaxial Growth
  • Films
  • Materials
  • Materials Science
  • Microscopes
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optoelectronic Devices
  • Personal Information Managers
  • Phase Separation
  • Semiconductor Devices
  • Semiconductors
  • Solid State Chemistry
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Powder metallurgy of Titanium alloys.
  • Research Science/Academic Research
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics