Ultra-High Speed Compound Semiconductor Photonics. JSEP
Abstract
Significant growth stimulation by laser irradiation during the OMVPE process is only possible in the kinetically limited regime, which is traditionally avoided. We thus carried out a detailed study on the material properties of low temperature grown AlGaAs and on the reaction mechanisms involved in its synthesis. Growth conditions were similar to those employed during the excimer laser stimulation experiments.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 30, 1999
- Accession Number
- ADA368154
Entities
People
- J. P. Krusius
Organizations
- Cornell University College of Engineering