Processing of Nanocrystalline Nitrides and Oxide Composites
Abstract
Pressureless sintering of nanocrystalline AlN was achieved at remarkably low temperatures of 160 deg C and 155 deg C using coarse grained and nanocrystalline yttria additives, respectively. X-Ray diffraction studies showed that the nanocrystalline AlN materials obtained by our approach have a very low oxygen content, confirming FNAA results. The high purity and high density associated with our pressureless sintered undoped nanocrystalline AlN pellets gave rise to greater thermal conductivity values than hot-pressed conventional AlN. Yttria-doped nanocrystalline AlN pellets attained high density and high thermal conductivity (148 W/m-K) without resorting to special sintering conditions/treatments.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1999
- Accession Number
- ADA369525
Entities
People
- Jackie Y. Ying
- Martin L. Panchula
Organizations
- Massachusetts Institute of Technology