Nanoscopic Studies of Quantum Effects in Silicon Quantum Dots
Abstract
Under ARO supports, we have advanced the following fundamental knowledge in the man-made quantum phenomena: observation of resonant tunneling via the nano-particles of silicon embedded in a silicon dioxide matrix; theoretical models of dielectric constant, doping, capacitance and excitons in Si nano-particle, and visible light emission from superlattices consisting of alternate layers of silicon with adsorbed oxygen forming an epitaxial Si/O superlattice. Moreover this superlattice represents a new kind under the name Semiconductor-Atomic-Superlattice (SAS). We have achieved several important breakthroughs: Si/O superlattice showing a 0.5eV barrier height; a nine-period system showing electroluminescence (EL) which has lasted for more than a year without degradation; and the continuation of silicon epitaxy beyond the adsorbed oxygen with low defect density arising from the monolayer of oxygen, being less than 10(exp 9)/sq cm. The thin barrier is at most 1-2nm thick, which allows adjacent quantum states to couple strongly, forming an energy band.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 11, 1999
- Accession Number
- ADA369906
Entities
People
- Raphael Tsu
Organizations
- University of North Carolina at Charlotte