Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications, MRS Symposium Proceedings Held in San Francisco on 5-8 April 1999. Volume 572

Abstract

The introduction of the SiC substrate and the demonstration of bright III-N light-emitting diodes were catalysts for a large increase in research and development of wide-bandgap semiconductor materials and devices during the nineties. This symposium, "Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999," from the 1999 MRS Spring Meeting in San Francisco, California, focused on high-power, high-frequency and high-temperature applications of these wide-bandgap semiconductors. The symposium attracted a wide range of researchers who presented 120 papers in nine different sessions on topics such as bulk crystal growth, epitaxy, materials characterization, processing, and devices.

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Document Details

Document Type
Technical Report
Publication Date
Apr 08, 1999
Accession Number
ADA369923

Entities

People

  • Albert A. Burk
  • Chanh Nguyen
  • Michael R. Melloch
  • Steven C. Binari

Organizations

  • Materials Research Society

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Computational Fluid Dynamics
  • Crystallography
  • Electronics Industry
  • Electronics Laboratories
  • Material Degradation Processes
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Materials Testing
  • Modules (Electronics)
  • Optical Properties
  • Optics
  • Power Electronics
  • Semiconductors
  • Standing Waves

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Electronics Engineering
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics