Self-Consistent Transport Simulation in Quantum Structures

Abstract

This research was theoretical in nature and focused on quantum processes in nanostructures. Specifically we have investigated coherent transport and diffraction through arrays of nanostructures and proposed a new field effect transistor, called the AntiDot Diffraction Field Effect Transistor, ADDFET, purposely design to show tunable negative differential resistance and hystereses. Optic phonon-assisted tunneling through barriers containing arrays of dots has revealed 1-V characteristics characterized by an abrupt front and a broader NDR compared with double barrier resonant tunneling devices. We have proposed a new mode-locked far-infrared quantum dot laser tunable by modulation of acoustic phonon scattering, and a novel quantum dot spectrometer with multi-spectral capability. We have implemented the "scattering time engineering" technique into a comprehensive self-consistent tool for predicting the performances of a new intersubband, optically pumped, mid-infrared (MIR) laser, and developed a self-consistent model for single electron charging effects in quantum dots.

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Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1999
Accession Number
ADA369991

Entities

People

  • Jean-pierre Leburton

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Cyclotron Resonance
  • Diffraction
  • Electronics
  • Electrons
  • Engineering
  • Field Effect Transistors
  • Lasers
  • Nanostructures
  • Phonons
  • Quantum Dot Lasers
  • Quantum Dots
  • Scattering
  • Semiconductors
  • Simulations
  • Transistors
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing