Dynamics of Optical Recombination in GaN and AlxGal-xN

Abstract

During the project period, we have investigated the optical properties of III-nitride heterostructures and quantum wells and provided input for the improvement of materials quality, understanding of impurity properties, and optimization of device design. We were the first group to observe the persistent photoconductivity (PPC) effect in p-type GaN epilayers and in AlGaN/GaN heterostructures and utilized PPC effect to study the impurity properties in these materials. We were also one of the first few research groups to employ picosecond time-resolved photoluminescence (PL) measurement technique to study mechanisms of optical transitions, LED emission, and lasing in GaN and related materials.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1999
Accession Number
ADA370053

Entities

People

  • Hongxing Jiang

Organizations

  • Kansas State University

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Dynamics
  • Electrons
  • Emission
  • Epitaxial Growth
  • Field Effect Transistors
  • Heterojunctions
  • Materials
  • Molecular Beam Epitaxy
  • Optical Properties
  • Photoluminescence
  • Picosecond Time
  • Quantum Wells
  • Semiconductors
  • Silicon Carbide
  • Transitions

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing