Strain-Modulated Epitaxy

Abstract

Strain-Modulated Epitaxy (SME) is a novel approach, invented at Georgia Tech, to utilize subsurface stressors to control strain and therefore material properties and growth kinetics in the material above the stressors. The stressors are induced by patterning and compliant bonding in a composite substrate. The goal of this effort is to explore implementations and applications for and resulting from this new technique. We have: (1) invented the first use of metal bonds and bonded substrate removal for SME; (2) developed metastable growth and finite element mechanical models for SME; (3) grown mismatched materials on metal bonded substrates, (4) observed new growth kinetics and the alignment of mounds on bottom-patterned substrates, (5) observed the control of strain in self-assembled quantum dots with anion exchange; and (6) invented a new in-situ compliant substrate bond approach.

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Document Details

Document Type
Technical Report
Publication Date
Sep 09, 1999
Accession Number
ADA370136

Entities

People

  • April S. Brown

Organizations

  • Georgia Tech

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Citric Acid
  • Composite Materials
  • Crystal Growth
  • Crystals
  • Diffraction
  • Epitaxial Growth
  • Films
  • Geometry
  • Kinetics
  • Materials
  • Materials Processing
  • Quantum Dots
  • Thin Films
  • Three Dimensional
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Structural Health Monitoring of Composite Structures.

Technology Areas

  • Quantum Computing