Light-Emitting Diodes: Research, Manufacturing, and Applications III
Abstract
High-efficient light emitting diodes (LEDs) emitting red, amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layers instead of GaN active layers. Red LEDs with an emission wavelength of 680 nm which emission energy was smaller than the band-gap energy of InN were fabricated mainly resulting from the piezoelectric field due to the strain. The localized energy states caused by In composition fluctuation in the InGaN active layer seem to be related to the high efficiency of the InGaN-based emitting devices in spite of having a large number of threading dislocations. InGaN single-quantum-well-structure blue LEDs were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The emission spectra showed the similar blue shift with increasing forward currents between both LEDs. The output power of both LEDs was almost the same, as high as 6 mW at a current of 20 mA. These results indicate that the In composition fluctuation is not caused by dislocations, the dislocations are not effective to reduce the efficiency of the emission, and that the dislocations form the leakage current pathway in InGaN.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1999
- Accession Number
- ADA370183
Entities
People
- E. F. Schubert
- H. W. Yao
- Ian T. Ferguson