PT Spin Dependent Tunneling Sensor

Abstract

The purpose of this program is to develop magnetic field sensors using Spin Dependent Tunneling (SDT) material for use in low field applications (1-100 pT). Presently, low field applications typically require fluxgate magnetometers or SQUID magnetometers. Spin Dependent Tunneling (SDT) devices offer an order of magnitude improvement in low field sensing over Giant Magnetoresistance (GMR) sensors due to their intrinsically higher magnetoresistance (20%-40%) and relatively small saturation fields (2 Oe - 10 Oe). In addition, higher resistance values are relatively easy to attain in small areas, making it possible to have miniaturized devices with low power consumption. The SDT sensors developed under this contract should be very small (SOIC-8 package), should require little power, and should be easily combined with other electronics. If the program is successful, the SDT sensors should have distinct advantages in both commercial and military applications.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1999
Accession Number
ADA370287

Entities

People

  • Cathy Nordman
  • Dan Reed
  • Dave Brownell
  • James M. Daughton

Tags

Communities of Interest

  • Sensors

DTIC Thesaurus Topics

  • Contracts
  • Detection
  • Detectors
  • Energy Consumption
  • Films
  • Frequency
  • Frequency Response
  • Magnetic Detectors
  • Magnetic Fields
  • Magnetic Films
  • Magnetometers
  • Magnetoresistance
  • Materials
  • Measurement
  • Resistance
  • Surface Roughness
  • Thick Films

Readers

  • Sensor Fusion and Tracking Systems.
  • Superconducting Magnet Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems