The Progress of Research and Development of Integrated Ferroelectrics

Abstract

The progress in terms of processing technology and electrodes for the PZT and SBT ferroelectric capacitors in FERAMs is reported. The key issues addressed for BST films in DRAMs are presented. The ferroelectric materials used in microwave devices are illustrated. Antiferroelectric materials used in microelectro-mechanical systems are briefly discussed. The work in modeling Metal-Ferroelectric-Semiconductor Field Effect Transistor is summarized. It is recommended that the research and development of MFSFETs and their application in nonvolatile memories should be further pursued.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1998
Accession Number
ADA370657

Entities

People

  • Fat D. Ho

Organizations

  • University of Alabama in Huntsville

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Curie Temperature
  • Department Of Defense
  • Dielectric Permittivity
  • Dielectric Properties
  • Dielectrics
  • Electrical Properties
  • Fabrication
  • Field Effect Transistors
  • High Temperature
  • Low Temperature
  • Materials
  • Metal-Semiconductor Junctions
  • Radio Frequency Devices
  • Semiconductors
  • Thin Films

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics