Accelerated Program Development of High-Quality, Large-Area GaN and AlGaN Substrates
Abstract
The purpose of this work was to explore growth of thick layers of GaN, AlN, and AlGaN for use as substrates in III-N device epitaxy using sublimation vapor phase epitaxy (SVPE). The SVPE system was a vertical, cold-wall, pancake-style reactor similar in design to a MOCVD reactor. Ammonia was used as a nitrogen source, while the group III precursors were gallium chloride, GaCl3, and aluminum chloride, AlCl3. All growths were performed on sapphire substrates with approx. 1 micrometer GaN buffer layers prepared by MOCVD.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 12, 1999
- Accession Number
- ADA371383
Entities
People
- J. F. Schetzina
Organizations
- North Carolina State University