Growth and Characterization of ZnCdMgSe/ZnCdSe Quantum Wells on InP Substrates for Visible Emitters.

Abstract

High-quality lattice-matched quantum well (QW) structures of ZnCdSe/ZnCdMgSe were grown on InP substrates by molecular beam epitaxy. Emission energies from 2.306 to 2.960 eV were measured by low-temperature photoluminescence for samples with QW thicknesses between 5 and 80 A. Bandgap measurements indicate that these structures could be used in entirely lattice-matched blue, green, and yellow diode laser structures. Experimental measurements indicated that these structures have very little strain; hence, these materials could possibly be less prone to degradation than the current II-VI blue-green lasers grown on GaAs substrates.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1999
Accession Number
ADA372186

Entities

People

  • A. Cavus
  • Fred Semendy
  • Linghan Zeng
  • Marie C. Tamargo
  • Neal Bambha

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Chemistry
  • Crystal Lattices
  • Degradation
  • Emission
  • Lasers
  • Low Temperature
  • Materials
  • Measurement
  • Military Research
  • New York
  • Photoluminescence
  • Quantum Wells
  • Spectra
  • Substrates
  • Thickness
  • Visible Spectra

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Quantum Computing