Etch Pit Studies of II-VI-Wide Bandgap Semiconductor Materials ZnSe, ZnCdSe, and ZnCdMgSe Grown on InP

Abstract

Etch pit density (EPD) determination studies have been conducted on II-VI semiconductor materials ZnSe, ZnCdSe, and ZnCdMgSe grown on InP surfaces for the first time by using various etching solutions under different conditions of concentration, temperature, and time. We observed that for the binary, ternary, and quaternary samples, bromine-methanol solution was the only etchant with a reasonable etching effect. We could only perform an in-depth etching study for ZnSe grown on InP by using a Br:MeOH solution. Other etchants did not have an effect on the surface or morphology of the materials, and hence, a meaningful or consistent EPD could not be determined for ZnCdSe and ZnCdMgSe.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1999
Accession Number
ADA372188

Entities

People

  • A. Cavus
  • Fred Semendy
  • Linghan Zeng
  • Marie C. Tamargo
  • Neal Bambha

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Alcohols
  • Chemical Etching
  • Chemical Synthesis
  • Chemistry
  • Crystal Structure
  • Crystals
  • High Density
  • Materials
  • Methanols
  • Microscopes
  • Military Research
  • New York
  • Optoelectronic Devices
  • Physical Properties
  • Semiconductors
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics