SiC Discrete Power Devices.
Abstract
A novel planar vertical MOSFET structure (called ACCUFET), which eliminates both the problems of premature oxide breakdown and low inversion layer mobility, has been demonstrated by us. Here, the studies done at the Power Semiconductor Research Center for design and development of ACCUFETs are documented. The characteristics of ACCUFETs fabricated from 6H-SiC and 4H-SiC polytypes with measured breakdown voltages of 350-450 V, are compared. The 6H-SiC ACCUFETs exhibited excellent electrical characteristics, while the performance of 4H-SiC ACCUFETs was worse than expected. The investigation of the poor performance of the 4H-SiC ACCUFETs provided insights for changes in device design and process flow, for improving their breakdown voltage and specific on-resistance. Further, characteristics of Ni/4H-SiC Schottky rectifiers operating at 1.5 to 2.5 kV using low energy Ar implants for edge termination are reported. Apart from being a detailed study of the performance of 4H-SiC high voltage Schottky barrier diodes, the characterization of these diodes also provided insights on the quality of the starting material, the barrier heights and the edge termination, that contributed to the proposed new ACCUFET fabrication run. In addition, the effect of key device design parameters on device characteristics have been studied with the help of two-dimensional simulations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2000
- Accession Number
- ADA372200
Entities
People
- Bayant Jayant Baliga
- R. K. Chilukuri
Organizations
- North Carolina State University