Synthesis and Characterization of AlGaTlAs
Abstract
Initial experiments aimed at determining the utility of adding Al to the growth surface showed no apparent advantage, thus the program was focused on synthesis of compounds containing Ga, Tl and As. Experiments using elemental group III sources and (100) GaAs substrates were performed at various temperatures ranging from 200 deg C - 450 deg C. Attempts to increase the growth temperature while achieving similar Tl-incorporation behavior through the use of GaAs/TlAs and GaAs/TlGaAs superlattices were not successful. Analysis of the non-superlattice samples by electron microprobe (EMPA) showed evidence of Tl incorporation in all films grown at 400 deg C, as shown in Table I.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1999
- Accession Number
- ADA372218
Entities
People
- C. R. Abernathy
Organizations
- University of Florida