Advanced Silicon FET Physics and Device Structures
Abstract
The objectives of the project were to develop experimental techniques for characterizing the transport and hot carrier phenomena in advanced MOSFETs, to investigate the limits of gate oxide scaling, to develop engineering models for the relevant physical effects, and to incorporate the results in device simulators and in MOSFET models for circuit simulations. All the objectives have been met.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 23, 1998
- Accession Number
- ADA372474
Entities
People
- Chenming Hu
- Jeffrey Bokor
Organizations
- University of California, Berkeley