Comparison of Proton, Neutron and Electron Radiation-Induced Electron Traps in N-GaAs Epilayers Studied by Deep Level Transient Spectroscopy.
Abstract
This paper compares the deep level transient spectroscopy (DLTS) study of proton radiation-induced defects in molecular beam epitaxy (MBE) n-GaAs with the defects generated in n-GaAs by high energy electron and neutron radiation. For proton irradiation, it was found that the density of radiation-induced traps increased with radiation fluence. The activation energies, capture cross sections and trap densities with respect to radiation fluence are reported. Some of the observed traps have the same signatures as those reported previously for proton irradiated vapour phase epitaxy (VPE) and liquid phase epitaxy (LPE) GaAs. The detailed structure of the trap perviously designated as PR4 by Eisen et al is also presented This structure is observed for the first time as two distinct peaks in the DLTS spectra of proton-irradiated MBE n-GaAs corresponding to two bulk traps in GaAs film independent of their position within the film. The results are compared to previous studies of neutron and electron irradiated n-GaAs performed in our laboratory. The results indicate that some defect centres are generated by all three types of high energy particles discussed in this work but that others are radiation-type dependent. The significance of the nature of the irradiating particle and the unirradiated GaAs in the growth of radiation-induced defects is pointed out.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1999
- Accession Number
- ADA372781
Entities
People
- G. H. Yousefi
- J. B. Webb
- S. M. Khanna
- Z. Wasilewski
Organizations
- Defence Research and Development Canada