Development of GaN Based Microwave Power Amplifier for X Band Applications.

Abstract

The feasibility of utilizing the GaN/AlGaN material system in the development of high power amplifiers for X-band frequencies and above was investigated. The GaN based heterojunction field effect transistor (HFET) on SiC shows remarkable power density at microwave frequencies. An order of magnitude improvement can be attained in output power when compared with present GaAs devices, judging from the already observed power density along with further anticipated advances of these GaN devices. Four individual HFET devices operating in combination were able to achieve 6 watts (W) output at 9.4 Ghz. The investigation into improving this performance for Phase Ii research is documented.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 20, 2000
Accession Number
ADA373044

Entities

People

  • Kang L. Wang
  • Kevin W. Alt

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Amplifiers
  • Band Gaps
  • Energy Bands
  • Field Effect Transistors
  • Frequency
  • Materials
  • Metal-Semiconductor Junctions
  • Microwave Amplifiers
  • Microwaves
  • Power Amplifiers
  • Power Levels
  • Resistance
  • Semiconductors
  • Thermal Resistance
  • Transistors
  • X Band

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Semiconductor Device Technology