Selected Energy Epitaxial Deposition (SEED) and Low Energy Electron Microscopy (LEEM) of AlN, GaN and SiC Thin Films.

Abstract

The report objectives are: * Optimize low-temperature growth of GaN using seeded supersonic molecular beams of NH3 and triethylgallium (TEG). * Determine the optimum growth parameters by conducting in situ real-time observations of the heteroepitaxial growth of GaN(0001) on 6H-SiC(0001) substrates using the SSJ source seeded with NH3 with the low-energy electron microscope (LEEM). * Investigate effects of precursor translational energy on growth kinetics and morphology of GaN films.

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Document Details

Document Type
Technical Report
Publication Date
Feb 09, 2000
Accession Number
ADA373469

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Chemical Reactions
  • Compound Semiconductors
  • Electron Microscopes
  • Electron Microscopy
  • Epitaxial Growth
  • High Temperature
  • Low Temperature
  • Microscopy
  • Molecular Beam Epitaxy
  • Molecular Beams
  • North Carolina
  • Schematic Diagrams
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Thin Films
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Hypersonics
  • Hypersonics - Hypersonic Flight
  • Microelectronics
  • Microelectronics - Graphene