Growth and Fabrication of GaN-Based Heterojunction Biopolar Transistors

Abstract

In this progress report, we summarize the results to date of experiments to prove the existence of a two dimensional hole gas. If possible, this hole gas will result in enhanced performance Heterojunctions bipolar transistors for military and commercial applications. Also summarized is the background work required to achieve the two dimensional hole gas including several never before reported results on the behavior of p-type dopants in III-Nitrides.

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Document Details

Document Type
Technical Report
Publication Date
Mar 06, 2000
Accession Number
ADA374611

Entities

People

  • April S. Brown

Organizations

  • Georgia Tech

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Electric Fields
  • Fabrication
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Materials
  • Measurement
  • Piezoelectric Effect
  • Sapphire
  • Saturation
  • Substrates
  • Technical Information Centers
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology