High Power Gallium Nitride Devices for Microwave and RF Control Applications

Abstract

Gallium Nitride devices were studied for use in microwave and RF control applications, primarily as electronic switch elements. For the test devices studied, broadband switch cutoff frequencies in excess of 130 GHz were seen, with cutoff frequencies as high as 400 GHz possible with the next generation devices. Second order distortion intercept points of greater than 50 dBm should be achievable with current gallium nitride technologies.

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Document Details

Document Type
Technical Report
Publication Date
Mar 10, 2000
Accession Number
ADA374652

Entities

People

  • Robert H. Caverly

Organizations

  • Villanova University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Broadband
  • Compound Semiconductors
  • Distortion
  • Electric Fields
  • Electron Gas
  • Electron Mobility
  • Electronic Switches
  • Electronics
  • Electrons
  • Elements
  • Field Effect Transistors
  • Frequency
  • Gallium Nitrides
  • High Electron Mobility Transistors
  • Semiconductors
  • Switches
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics