Dielectric Properties of PMN-PZ-PT System
Abstract
Recently, there has been considerable scientific and technological interest in ferroelectric thin films for numerous potential applications that utilize their dielectric, piezoelectric, pyroelectric and electro-optic properties. Among them, lead zirconate titanate (PZT) and PZT-Pb(Mg1/3Nb2/3)O3 systems at compositions near their morphotrophic phase boundaries, have been investigated because of their excellent piezoelectric and dielectric properties for actuator and semiconducting memory devices. In this study, ferroelectric thin films with 0.1Pb(Mg1/3Nb2/3)O3-0.9Pb(ZrxTi(1-x))O3 (0.3 <= x <= 0.9) composition have been prepared by chemical solution deposition with corresponding metal alkoxides partially stabilized with triethanolamine and acetylacetone. 0.1Pb(Mg1/3Nb2/3)O3-0.9Pb(ZrxTi(1-x))O3 thin films were deposited on Pt-coated substrate by spin-coating and crystallized at 700 deg C in air. And then their dielectric properties were investigated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 2000
- Accession Number
- ADA374671
Entities
People
- Ki H. Yoon
Organizations
- Yonsei University