InGaP/InGaAs-on-Ge Concentrator Solar Cell for Space Power Generation

Abstract

Al(0.33)In(0.67)P has been chosen as the lattice-matched passivating front and back window layer of the 1.62 eV InGaP top cell. High-resolution X-ray diffraction (HRXRD) studies of this material grown by metal organic vapor phase epitaxy (MOVPE) in our laboratory show it to be of excellent crystalline quality. Hall effect measurements show that the Al(0.33)In(0.67)P films can be doped n-type (Si) up to 2x10(exp 19)/cu cm and p-type (Zn) to mid-10 (exp 18)/cu cm level. Secondary electron mass spectrometry (SIMS) analysis of the films revealed that the oxygen concentration in these films was in the low to mid-10(exp 17)/cu cm level. Although the oxygen level is slightly higher than that found in non-aluminum containing III-V alloy layers, it is not believed to be high enough to be detrimental to the performance of the InGaP top cell. However, we are continuing process improvement studies to reduce the oxygen level further.

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Document Details

Document Type
Technical Report
Publication Date
Mar 28, 2000
Accession Number
ADA376061

Entities

People

  • Samar Sinharoy

Tags

DTIC Thesaurus Topics

  • Cell Structure
  • Cells
  • Contracts
  • Demographic Cohorts
  • Diffraction
  • Efficiency
  • Governments
  • Hall Effect
  • High Resolution
  • Mass Spectrometry
  • Materials
  • Quantum Efficiency
  • Solar Cells
  • Substrates
  • Tunnel Diodes
  • Vapor Phases
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space