Infrared Materials and Devices of III-V Arsenides and Antimonides by Molecular Beam Epitaxy

Abstract

Infrared electroabsorption modulation in AlSb/InAs/AlGaSb/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy was achieved. Molecular beam epitaxial growth of GaInSbBi for 8-12 Micrometers infrared detector applications was demonstrated for the first time. AlAsSb/InAsSb heterojunction diodes were achieved on Si substrates by molecular-beam epitaxy with a suitable breakdown voltage for devise applications. Narrow band gap InAs high electron mobility transistors with heterojunction AlSbAs barriers were demonstrated. AlGaAs/GaAs Npn heterojunction bipolar transistors grown on Si (311) by molecular beam epitaxy with a record emitter-collector breakdown voltage of 13 V were achieved.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2000
Accession Number
ADA376127

Entities

People

  • Wen I. Wang

Organizations

  • Columbia University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Bipolar Junction Transistors
  • Crystal Growth
  • Detectors
  • Electrical Engineering
  • Electron Mobility
  • Energy Bands
  • Energy Gaps
  • Epitaxial Growth
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Infrared Detectors
  • Molecular Beam Epitaxy
  • Quantum Wells
  • Solid State Electronics
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing