Process Characterization of Non-Stoichiometric Material Growth

Abstract

This project addresses characterization of the Molecular Beam Epitaxy (MBE) process utilizing a Statistical Experiment Design (SED) approach and then building models. This approach is applied to GaAs-based materials, InP-based materials, and GaN-based materials, and to non-stoichiometric Be-doping InGaAs materials. The model responses are related to known physical effects for the growth of these materials. In addition, new phenomena are uncovered.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1999
Accession Number
ADA376202

Entities

People

  • April S. Brown
  • Gary May

Organizations

  • Georgia Tech Research Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Growth
  • Data Analysis
  • Diffraction
  • Epitaxial Growth
  • Experimental Design
  • Films
  • Low Temperature
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Neural Networks
  • Quantum Wells
  • Semiconductor Manufacturing
  • Semiconductors
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology
  • Software Engineering.