Growth and Characterization of Doped CdSSe and CdSeTe for Opto-Electronic Applications
Abstract
Control over composition and basic properties of semiconductors is extremely important for the fabrication of efficient and reliable devices. Both macroscopic and microscopic properties of materials strongly depend on their structure. The goal of this three-year project was to establish a collaborative research effort between Fisk University and the Air Force Research Laboratory, aimed at the preparation and optical characterization of doped CdSSe and CdSeTe for their use in opto-electronic applications. The approach involved the preparation of novel crystals followed by investigation of the basic optical and electro-optical properties of the Cd-based ternary compounds. Optical properties were characterized using UV-visible-NIR spectroscopy and infrared spectroscopy, and photorefractive properties were measured using conventional wave-mixing techniques. Defect and transport properties were characterized by photo luminescence and optical absorbance spectroscopies. The achievements under this program led to improvements in the understanding of interactions between material defect properties of II-VI semiconductor crystals and the photorefractive response and other optical properties. This understanding will allow tailoring these defect properties in order to optimize the material for specific applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1999
- Accession Number
- ADA377629
Entities
People
- A. Bürger
- Steven H. Morgan
Organizations
- Fisk University