Correlation of Picosecond Laser-Induced Latchup and Energetic Particle-Induced Latchup in CMOS Test Structures
Abstract
We show that the thresholds for picosecond (psec) laser pulse-induced latchup and energetic particle-induced latchup are well correlated over a range of bulk CMOS test structures designed to be susceptible to latchup. The spatial length of the latchup-sensitive node of the test structures covers a range of values that commonly occur in bulk CMOS devices. The accuracy of this correlation implies that laser-induced latchup can be used for hardness assurance and, under the proper conditions, can be an accurate predictor of latchup threshold linear energy transfer (LET) for most bulk CMOS devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 15, 2000
- Accession Number
- ADA377659
Entities
People
- J. R. Scarpulla
- K. P. Macwilliams
- S. C. Moss
- S. D. LaLumondiere
- W. R. Crain
Organizations
- The Aerospace Corporation