SiGeC Optoelectronic Devices

Abstract

These result in a better I-V characteristic with smaller leakage current and higher breakdown voltage. Our electrical study indicated that by careful control the growth conditions and carbon percentages, high-quality devices could be fabricated. These results indicate that strain, composition, and substrate orientation all play roles in quantum dot formation and provide different vehicles to control the self-assembly and self-organization of quantum dots for device applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2000
Accession Number
ADA377834

Entities

People

  • J. Kolodzey

Organizations

  • University of Delaware

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Carrier Mobility
  • Crystals
  • Diffraction
  • Electrical Properties
  • Energy Bands
  • Epitaxial Growth
  • Heterojunctions
  • Mass Spectrometry
  • Optical Properties
  • Quantum Dots
  • Scattering
  • Self Assembly
  • Self Organizing Systems
  • Spectra
  • Spectroscopy
  • Three Dimensional
  • Two Dimensional

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing