Silicon/Zinc Sulfide Multi-Quantum-Well Structures for Inter-Subband Lasers

Abstract

Reduced cross-contamination, development of a new process to improve thin-layer growth, more precise control of the thicknesses of both Si and ZnS epitaxial layers, reduced fixed charge density in the ZnS or at the ZnS/Si interface, reduced mobile charge in the ZnS, determination of the band offset between ZnS and Si to be 1.0 +/- 0.1 eV and development of a new class of wide bandgap Be-chalcogenide materials.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1999
Accession Number
ADA378088

Entities

People

  • Wiley P. Kirk

Organizations

  • Texas Engineering Experiment Station

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Complementary Metal-Oxide Semiconductors
  • Compound Semiconductors
  • Electrical Properties
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Heterojunctions
  • Laser Applications
  • Materials
  • Modules (Electronics)
  • Molecular Beam Epitaxy
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Analytical Chemistry
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Quantum Computing