Development of InGaN and AlInGaN Compounds for Optoelectronic Devices
Abstract
The wide bandgap III-nitride system Al(y)Ga(x)In(1-y-x)N has a myriad of applications in areas such as light emitting devices, and high frequency/high temperature electronics. Salient results derived from this research include such topics as the first report of the growth and characterization of the quaternary system Al(y)Ga(x)In((1-y-x)N, the first description of the effect of H2 gas on Indium and impurity incorporation in In(x)Ga(1-x)N, the experimental verification of ordering and phase separation in In(x)Ga(1-x)N, the discovery of an optical memory effect in GaN, and the growth and characterization of novel multicolor emitting GaN/InGaN based double heterostructures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 08, 2000
- Accession Number
- ADA378952
Entities
People
- F. G. Mcintosh
- J. C. Roberts
- N. A. El-masry
- S. M. Bedair
Organizations
- North Carolina State University