Gallium Nitride Static Induction Power Transistors
Abstract
This report summarizes a one year program to investigate issues related to fabrication and performance of III-V nitride static induction power transistors. To understand vertical conduction mechanisms in this device a nearly ideal, vertical Schottky barrier diode was fabricated and analyzed. By applying the diffusion theory of Schottky barriers, a vertical mobility of ^950 sq cm/Vs was measured which, when compared to a lateral mobility in the same film of 160 sq cm/Vs, indicates a minimal role of dislocations in scattering electrons in the vertical direction. In an effort to develop the required processing for a GaN static induction transistor, high density plasma etching was optimized for fabricating the recessed gate structure. The effect of such processing on ohmic contact quality was examined as a first step to understanding such surfaces. It was found that even etches with very low ion energies degraded the contacts and that the damage could be recovered with a short (<30 sec) rapid thermal anneal at 700 C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 2000
- Accession Number
- ADA379004
Entities
People
- Charles. R. Eddy Jr.
- Theodore D. Moustakas
Organizations
- Boston University