Spatial-Phase-Locked Electron-Beam Lithography

Abstract

Spatial-phase-locked electron-beam lithography (SPLEBL) is a novel approach to achieving very high pattern-placement accuracy, and precision, in electron beam lithography. The accuracy achieved by SPLEBL is essential in order to enable the continuation of next-generation lithography techniques to below 20-nm feature sizes.

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Document Details

Document Type
Technical Report
Publication Date
Dec 30, 1999
Accession Number
ADA379019

Entities

People

  • Henry I. Smith

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Accuracy
  • Algorithms
  • Compressed Sensing
  • Detectors
  • Digital Signal Processing
  • Electron Beam Lithography
  • Electron Beams
  • Electron Emission
  • Electron Scattering
  • Electrons
  • Lithography
  • Measurement
  • Precision
  • Scattering
  • Simulations
  • Simulators
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Distributed Systems and Data Platform Development
  • Library and Information Science/ Studies, Southeast Asia Studies, Bibliography of Vietnam and Lao Studies.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene