Fabrication of Optical Channel Waveguides in the GaAs/AlGaAs System by MeV Ion Beam Bombardment

Abstract

Optical channels have been formed in selectively masked planar GaAs/AlGaAs waveguide structures using 10 MeV oxygen, 8 MeV carbon, and 8.5 MeV As ions. Implantation at different temperatures appears to have a direct effect on the propagation mode losses. Single-mode operation at 1.3 micrometers was observed from all the optical channels fabricated with O and C ions. The As ions were implanted into a different multiple quantum well (MQW) structure that was characterized at 905 nm. The optical characterization results provide insight as to which ion beam parameters are best suited to optimize this fabrication process.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2000
Accession Number
ADA379168

Entities

People

  • D. B. Poker
  • D. Ila
  • E. K. Williams
  • P. R. Ashley
  • R. L. Zimmerman

Organizations

  • Alabama A & M College

Tags

Communities of Interest

  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Computers
  • Current Density
  • Fabrication
  • High Energy
  • Ion Beams
  • Ions
  • Laser Diodes
  • Lasers
  • Materials
  • Measurement
  • Optical Properties
  • Optoelectronic Devices
  • Quantum Wells
  • Refractive Index
  • Semiconductors
  • Waveguides

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Microwave Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing