(AASERT 95) Quantum Dot Devices and Optoelectronic Device Characterization

Abstract

We reported evidence of quasi-continuous optical gain in CdS quantum dots (QDs) fabricated by the sol gel process and embedded in glass. The gain spectra were obtained using the pump and probe technique and nanosecond (quasi resonant) excitation at 11 K. The dots were in the intermediate quantum-confirement regime and the concentration of CdS is relatively high. The gain, which is spectrally broad, develops on the low energy side of the absorption band edge. The reason why the gain, which originates from the recombination of several excited levels between two and one electron-hole pairs states (i.e., biexciton to exciton). The maximum measured gain reaches 200 cm at 11 K and 17cm at 170 K.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1998
Accession Number
ADA379743

Entities

People

  • Nasser Peyghambarian

Organizations

  • University of Arizona

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Diffraction
  • Electron Holes
  • Electrons
  • Excitation
  • Excitons
  • Films
  • Ion Exchange
  • Lasers
  • Materials
  • Optical Properties
  • Optoelectronic Devices
  • Quantum Dots
  • Scattering
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing