Growth of Single Crystals and Fabrication of GaN and AlN Wafers
Abstract
GaN and AlN single crystals were grown from the vapor phase by evaporation of gallium or aluminum metals under an ammonia or nitrogen flow in a high temperature reactor. A growth rate of 500 micrometers/hr in the c direction was achieved for GaN while the growth rates for AlN were as high as a few millimeters per hour. The crystal size reached 3 mm for GaN and up to 15 mm for AlN. For both materials, the crystal aspect ratio (c/a) could be controlled by temperature and partial pressure of reactants. The resulting crystals were transparent and of excellent crystalline quality, as confirmed by x-ray diffraction, Raman scattering, and transmission electron microscopy studies. Photoluminescence studies on GaN conducted at 77 K showed a sharp emission peak centered at 359 nm. Time dependent photoluminescence measurements revealed optical metastability in bulk GaN.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 2000
- Accession Number
- ADA379749
Entities
People
- Robert F Davis
- Zlatko Sitar
Organizations
- North Carolina State University