High Power III-V Mid-Infrared Lasers for the Spectral Range of 3-3.6 Microns

Abstract

This report results from a contract tasking SEC for Microelectronics of Ioffe Physico-Technical Institute as follows: The contractor will investigate high power mid-IR lasers based on III-V semiconductor heterostructures. Such lasers based on type I and II InAs(Sb)/InGaAsSb. GaInAsSb/In(Ga)As(Sb) double heterostructures and also novel lasers with asymmetric band offset confinement will be fabricated and studied both theoretically and experimentally. Three samples of the type II lasers and three samples of the LED2 structures will be delivered at the end of the contract.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2000
Accession Number
ADA379926

Entities

People

  • Yury Yakovlev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Energy Bands
  • Epitaxial Growth
  • Fermi Levels
  • Laser Diodes
  • Lasers
  • Measurement
  • Modules (Electronics)
  • Power Electronics
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Solid State Physics
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy
  • Microelectronics