Study of Electronic Structure and Tunneling-Transport Properties of Novel Rare-Earth-Compound/Semiconductor Interfaces and Quantum Wells
Abstract
In this grant electronic structure and transport properties of several magnetic rare earth compounds such as Er and Gd pnictides were investigated by means of several first-principle and model techniques. Several other potentially important magnetic compounds such as MnAl, MnGa, and GaMnAs were also considered. All these materials can be grown epitaxially on GaAs or other conventional semiconductors thus forming magnetic heterostructures or nanocomposites. Our work provided solid theoretical background for a number of new experiments and significantly improved understanding of some recently discovered phenomena such as: - Shubnikov-DeHaas oscillations in bulk ErAs - Spin-dependent resonant tunneling in GaAs/ErAs double-barrier heterostructures - Colossal magnetoresistance in GaAs/ErAs nanocomposites. We have also resolved several materials science issues such as: - Schottky barrier formation at GaAs/ErAs interfaces - Magnetic anisotropy of MnAl and MnGa - Growth of self-assembled MnAl quantum dots on GaAs Our work identifies several important applications related to spin-dependent transport in semiconductor-based magnetic heterostructures and nanocomposites.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 14, 2000
- Accession Number
- ADA380329
Entities
People
- A. G. Petukhov
Organizations
- South Dakota School of Mines and Technology