A Conformal-Mapping Treatment of the Effect of a Semi-Infinite Gate on a Two-Dimensional Electron Gas

Abstract

A pinched-off high-electron-mobility transistor containing a perfectly conducting two-dimensional electron gas (2DEG) is described mathematically within an idealized two-dimensional geometry, so that conformal mapping techniques can be used to compute internal fields at the transistor drain. The field and charge distribution at the drain end of the 2DEG calculated in this way suggest that the charge is a nonmonotonic function of position in this region.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2000
Accession Number
ADA381329

Entities

People

  • Frank J. Crowne

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Air Platforms
  • C4I

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Complex Variables
  • Conformal Mapping
  • Dielectrics
  • Electric Fields
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Equations
  • Field Effect Transistors
  • Geometry
  • Heterojunction Bipolar Transistors
  • High Electron Mobility Transistors
  • Military Research
  • Plasma Oscillation
  • Transistors
  • Two Dimensional

Readers

  • Fluid Dynamics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics