Ballistic Electron Emission Microscopy Study of Novel Quantum Objects and Electronic Defects
Abstract
Over the approximately 2 1/2 year period of the above AFOSR grant, substantial progress has been made in the further development of Ballistic Electron Emission Microscopy (BEEM) as a quantitative microscopic and spectroscopic tool for the characterization of buried quantum objects and electronic defects in semiconductors. During the period of this grant, we have done the following: Developed a theoretical model for the simulation of BEEM spectra. The model is compared with the experimentally obtained Second Derivative (SD) spectra for the prototypical case of Al(x)Ga(1-x)As/GaAs heterostructures. Quantitative numerical agreement is obtained. ii. We have extended the modeling with Monte Carlo simulations to get detailed understanding of BEEM spectra as a function of depth below the surface. iii. BEEM has been used for several spectroscopic studies on novel materials systems. These include observation of the splitting of the L band in GaInP due to ordering. the "local" conduction band offset of GaSb quantum dots' grown on GaAs; study of local electrical transport within the network of dislocations in GaN; and finally, the measurement of heterojunctions band offsets in several planar heterostructures based on arsenides, phosphides and antimonides.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 03, 2000
- Accession Number
- ADA381554
Entities
People
- John E. Bowers
- Venkatesh Narayanamurti
Organizations
- University of California, Santa Barbara