InAs/GaInSb Based Detectors Sensitive to Radiation Beyond 15 microns
Abstract
Report developed under SBIR contract for topic AF99-163. Due to the lack of availability of suitable GaSb substrates our strategy has been to make suitable buffer layers on the semi-insulating GaAs substrates before the superlattices are grown. Although significant progress was made to produce reasonable quality (111) superlattice samples, further improvement is necessary to reach the level of the (100) superlattices. Interpretation of the measurement result is thus in part affected by the relatively high level of defects in these samples, and decisive comparison can not yet be made between the two crystalline orientations. Nonetheless a systematic study has been carried out which resulted in producing bandedge transmission as long as 15 micrometers. Many samples exhibiting 8-12 micrometers have been demonstrated. We are hopeful with improving growth techniques the theoretical prediction for these (111) superlattices may be realized.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 05, 2000
- Accession Number
- ADA382058
Entities
People
- Peter P. Chow