Silicon-on-Sapphire Material and Device Properties at High and Low Temperature

Abstract

The aim of this paper is to present a thorough examination and update the electrical properties of recent silicon on sapphire wafers.

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Document Details

Document Type
Technical Report
Publication Date
May 05, 1999
Accession Number
ADA382766

Entities

People

  • D. Munteanu
  • Isaac Lagnado
  • Paul De La Houssaye
  • S. Cristoloveanu

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Bipolar Junction Transistors
  • Carrier Mobility
  • Circuits
  • Department Of Defense
  • Dielectrics
  • Electrical Properties
  • Hall Effect
  • High Density
  • High Temperature
  • Information Operations
  • Low Temperature
  • Materials
  • Mobility
  • Sapphire
  • Thermal Conductivity
  • Transistors

Fields of Study

  • Materials science