Long-Wavelength Vertical Cavity Lasers with Air/Semiconductor Mirrors: Nanoscale Gate Technology for Silicon MOSFETS

Abstract

We have investigated methods to improve sub-100 nm MOSFET performance. We discovered that Poly-SiGe has very attractive qualities when used as the transistor gate material. Poly-SiGe offers less boron penetration, less poly depletion, and higher hole mobility. Dynamic Threshold MOSFET (DTMOS) techniques were also investigated to allow for improved inverter drive current over a broader range of supply voltages. We applied these techniques to various passgate logic families to show how DTMOS designs can avoid speed degradation at low supply voltages.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 2000
Accession Number
ADA382869

Entities

People

  • Jeffrey Bokor
  • Nick Lindert

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Degradation
  • Electric Fields
  • Electronic Equipment
  • Electronics
  • High Temperature
  • Information Operations
  • Inverters
  • Long Wavelengths
  • Low Voltage
  • Materials
  • Mobility
  • Semiconductors
  • Solid State Electronics
  • Students
  • Transistors
  • Voltage
  • Work Functions

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics