Nonequilibrium Growth of GaN/Si(1-x-y)Ge(x)C(y)/Silicon-on-Insulator
Abstract
The objectives of this project lies in the growth, characterization, optimization, and fabrication of wide band gap semiconductor thin films and structures. The emphasis lies in the integration of wide band gap semiconductors with silicon and the use of supersonic jet epitaxy to lower the growth temperature and to discover unique and novel applications of this growth technique. Research highlights include the successful growth of silicon carbide, gallium nitride, and aluminum nitride thin films on silicon and miscut silicon substrates, on four-inches silicon wafers, the determination of smooth film-silicon interface and nature of dislocations by cross section scanning transmission electron microscopy, the fabrication of silicon carbide to silicon ohmic contact and rectifying junction with high figures of merit diode properties.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 05, 2000
- Accession Number
- ADA382874
Entities
People
- Wilson Ho
Organizations
- Cornell University