Alternative Approaches to p-type Doping of GaN

Abstract

The problem being addressed: p-type doping of GaN. Conventional (column II) acceptors produce low hole concentrations. High hole concentrations are needed for low resistivity p-type material and p-type ohmic contacts.

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Document Details

Document Type
Technical Report
Publication Date
Mar 10, 2000
Accession Number
ADA382954

Entities

People

  • Gary W. Wicks

Organizations

  • University of Rochester

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DTIC Thesaurus Topics

  • Abstracts
  • Classification
  • Conductivity
  • Energy Bands
  • High Temperature
  • Materials
  • Metal-Semiconductor Junctions
  • Military Research
  • Monitoring
  • Nitrogen
  • Nitrogen Compounds
  • Security
  • Site Selection
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  • Valence
  • Valence Bands

Fields of Study

  • Materials science

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  • Semiconductor Device Technology