InGaP/InGaAs-on-Ge Concentrator Solar Cell for Space Power Generation

Abstract

The passivating front and back window layer of the top cell has been chosen. We have chosen to use InGaAs as the tunnel junction interconnect compound since it is easily degenerately doped. All of the dual junction cell structures were grown on GaAs substrates. Time constraints prevented us from completing the development of the GaAs-on-Ge growth process. Analysis of the I-V and EQE data, and comparison with computer-modeled data, shows that the performance of the dual-junction cell is still being controlled by the bottom cell, in spite of top cell thinning. Further improvement in the dual-junction cell efficiency is possible by thinning the front window.

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Document Details

Document Type
Technical Report
Publication Date
Oct 12, 2000
Accession Number
ADA383192

Entities

People

  • Samar Sinharoy

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Antireflection Coatings
  • Cell Structure
  • Cells
  • Cells (Biology)
  • Contractors
  • Contracts
  • Current Density
  • Efficiency
  • Governments
  • Information Operations
  • Procurement
  • Quantum Efficiency
  • Short Circuits
  • Solar Cells
  • Substrates
  • Test Facilities

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Space